‘? vs-1N5819, vs-1 N5819-M37 Www'ViShay'C°m Vishay SemiconductorsSchottky Rectifier, 1.0 A
FEATURES
- Low profile, axial leaded outline ?
- High frequency operation
Cathode Anode - Very low fonward Voltage drope4+¢4e
-High purity, high temperature epoxy ROHS
encapsulation for enhanced mechanical Strength °°MPL"‘NTHALOGENDo—2o4AL and moisture resistance pREE
Available
- Guard ring for enhanced ruggedness and long
term reliability
pRoDucT suMMAnY . compliant to FioHs Directive 2002/95/EC
' Designed and qUa'ified ‘or °°mmer°ia' 'eVe'
O Halogen-free according to IEC 61249-2-21 definitionoptimized for very low forward voltage drop, with moderate
n (‘M3 °n'y)
Singledie leakage. Typical applications are in Switching power
See Electrical table Supplies, converters, freewheeling diodes, and reverse
battery protection.
OESORIPTION
The VS-1N5819... axial leaded Schottky rectifier has been
MAJOR RATINGS AND OHARAOTERISTIOS
CHARACTERISTICS
Rectangular waveform
1Apk,TJ:25°C
A -40tO150
VOLTAGE RATINGS
PARAMETER vs-1N5819 VSS-1N5819-M3
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS
'gA::i?”;uT average forward Current E 50 % duty cycle at TL : 90 “C, rectangular waveform
Maximum peak one Cycle 5 us sine or 3 its rect_ pulse Following any rated load
non—repetitive surge current condition and with rated
10 ms sine or 6 ms rect. pulse VRRM appliedSee fig. 6Revision: 21 -Sep-11 1 Document Number: 94614
For technical questions within your region: DiOdesAmericas@vishay.cOm, DiodesAsia@vishay.com, DiQdeSEurOpe@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
1N5820 DIODE SCHOTTKY 20V 3A DO-201AD
1N5821-E3/54 RECT SCHOTTKY 3A 30V DO-201AD
1N5821-T DIODE SCHOTTKY 30V 3A DO-201AD
1N5821RLG DIODE SCHOTTKY 30V 3A DO201AD
1N6097 DIODE SCHOTTKY 30V 50A DO-5
1N6263W-7-F DIODE SCHOTTKY 60V 333MW SOD123
1N6392 DIODE SCHOTTKY 45V 60A DO-5
1N916B DIODE HI CONDUCTANCE 100V DO-35
相关代理商/技术参数
1N5819U02B 制造商:STMicroelectronics 功能描述:
1N5819UB1 制造商:STMicroelectronics 功能描述:
1N5819UR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:1 AMP SCHOTTKY BARRIER RECTIFIERS
1N5819UR1 制造商:CDI 功能描述:
1N5819UR-1 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 1A 2-Pin DO-213AB 制造商:Sensitron Semiconductors 功能描述:Diode Schottky 45V 1A 2-Pin DO-213AB 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER, DO-41, LAW - Bulk
1N5819UR-1/TR 功能描述:SCHOTTKY 制造商:microsemi corporation 系列:- 零件状态:在售 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):45V 电流 - 平均整流(Io):1A 不同 If 时的电压 - 正向(Vf:490mV @ 1A 速度:快速恢复 = 200mA(Io) 不同?Vr 时的电流 - 反向漏电流:50μA @ 45V 不同?Vr,F 时的电容:70pF @ 5V,1MHz 安装类型:表面贴装 封装/外壳:DO-213AA 供应商器件封装:DO-213AA 工作温度 - 结:-65°C ~ 125°C 标准包装:100
1N5819UR-1JAN 制造商:Microsemi Corporation 功能描述:
1N5819UR-1JANTX 制造商:Microsemi Corporation 功能描述: